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 TB62731FUG
TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic
TB62731FUG
Step-up DC-DC Converter for White LED Driver
The TB62731FUG is an LED driver that uses a high power efficiency step-up DC-DC converter. The converter turns on/off 2 to 6 white LEDs in series. The IC incorporates an N-channel MOSFET transistor used for coil-switching and a function that reduces the LED current in response to increase in temperature. The mean LED current can be easily set using an external resistor. The IC is ideal as a driver for LED light sources used as liquid crystal backlights for PDAs, cellular phones, and handy terminals.
Weight: 0.016 g (typ.)
Features
* * Maximum output voltage: Vo 28 V Mean LED current values set according to external resistor 14 mA (typ.) @R_sens = 2.7 20 mA (typ.) @R_sens = 1.8 * * * * Supply power: Up to 320 mW supported Compact package: SSOP6-P-0.95B, 6 pins Built-in temperature derating function: LED current derated automatically depending on temperature High power efficiency Up to 80% of peak power efficiency achieved using recommended components Ron = 2.0 (typ.) @VIN = 3.2~5.5 V Built-in low Ron power MOS switch
Pin assignment (top view)
K
A
GND
GND
SHDN
VCC
Company Headquarters 3 Northway Lane North Latham, New York 12110 Toll Free: 800.984.5337 Fax: 518.785.4725
Web: www.marktechopto.com | Email: info@marktechopto.com
California Sales Office: 950 South Coast Drive, Suite 265 Costa Mesa, California 92626 Toll Free: 800.984.5337 Fax: 714.850.9314
TB62731FUG
Block Diagram
VCC A
OSC 350 kHz
S
R
Q
Buffer
SHDN
STB 0.12 V 0.5
REF i (add) i (sub)
A
K
GND
GND
Pin Functions
No 1 2, 5 3 4 6 Symbol K GND SHDN VCC A Function Pin connecting LED cathode to resistor used to set current. Feedback pin for voltage waveforms for controlling the LED constant current. Ground pin for the logic IC enable pin. Low, Standby Mode takes effect and pin A is turned off. Input pin for power supply for operating the IC. Operating voltage range: 3.0~5.5 V DC-DC converter switch pin. The switch is an N-channel MOSFET transistor.
Note: Connect both GND pins to ground.
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TB62731FUG
Absolute Maximum Ratings (unless otherwise specified, Topr = 25C)
Characteristics Supply voltage Input voltage Pin A (anode) current Pin A voltage Symbol VCC VIN Io (A) Vo (A) PD Rth (j-a) 1 Rth (j-a) 2 Operating temperature range Storage temperature range Maximum junction temperature Topr Tstg Tj Rating -0.3~+6.0 -0.3~+VCC + 0.3 +270 -0.3~+28 0.41 (IC only) Power dissipation 0.47 (IC mounted on PCB) (Note) 300 (IC only) 260 (IC mounted on PCB) -40~+85 -40~+150 125 C C C W Unit V V mA V
Saturation thermal resistance
C/W
Note: The power dissipation is derated by 3.8 mW/C from the maximum rating for every 1C exceeding the ambient temperature of 25C (when the IC is mounted on a PCB).
Recommended Operating Conditions (unless otherwise specified, Topr = -40~85C)
Characteristics Supply voltage SHDN pin high-level input voltage SHDN pin low-level input voltage SHDN pin high-level input pulse width Set LED current (mean) Symbol VCC VIH VIL tpw SHDN Io Test circuit Test condition Vo (A) = VIN 3.0 V, VOUT 16 V Min 3.0 VCC - 0.5 0 500 5 Typ. Max 4.3 VCC 0.5 20 Unit V V V s mA
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TB62731FUG
Electrical Characteristics (unless otherwise specified, Ta = -40~85C, VCC = 3.0~5.5 V)
Characteristics Supply voltage Current consumption at operation Current consumption at standby SHDN pin current Internal MOS transistor on-resistance Internal MOS transistor switching frequency Pin A voltage Pin A current Pin A leakage current Set LED current (mean) Pin K derating start ambient temperature Symbol VCC ICC (ON) ICC (SHDN) I_SHDN Ron fOSC Vo (A) Io (A) Ioz (A) Io Test circuit VCC = 3.6 V SHDN = 0 V SHDN = VCC, Built-in pull-down resistor I (A) < 270 mA, = Including detected resistance VCC = 3.2~4.2 V, R_sens = 1.8 Topr = 25C Test condition Min 3.0 275 28 210 17.6 (Note 1) 45 (Note 2) C Typ. 0.6 0.5 4.2 2.0 350 240 0.5 20 Max 5.5 0.9 1.0 7 2.5 425 270 1 22.4 Unit V mA A A kHz V mA A mA
Tdel
Equivalent to R_sens = 1.8 , L = 4.7 H, VO = 16 V
Note 1: Due to operation of the temperature derating function, measure when Ta = 25C. Note that fluctuation in R_sens resistors is not included in the specified value. Io may be different from the specified value due to the relation between the inductor value and load. Note 2: This rating is guaranteed by the design.
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TB62731FUG
IL, ILpeak VCC A
OSC 350 kHz SHDN VIN C1 STB
S
R
Q
Buffer NMOS C2 Ic2 0.12 V 0.5 Io
K
REF i (add) i (sub)
A R_sens
GND
Figure 1
Application Circuit
The basic TB62731FUG circuit uses a step-up DC-DC converter and burst control of the current pulse.
Basic Operation
The internal MOS transistor (NMOS) is turned on at f OSC = 350 kHz, charging energy to the inductor. The inductance current IL increases from 0. When IL = ILpeak = 240 mA (typ.) or when 5/6 (83.3%) of fOSC (= 350 kHz) is reached, the transistor is turned off. At that time, the coil maintains IL = ILpeak, the Schottky diode is turned on, and IL = Ic2 flows. Then, Ic2 decreases, reaching IL = 0. The above operation repeats. When Ic2 is fully charged, the surplus current becomes Io, which flows to the LED. The graph below shows details of the basic pulse used for burst control.
IL, ILpeak Maximum duty: 83.3% of fOSC
ILpeak = 240 mA (typ.)
With low inductance
With high inductance
T = 1/fOSC, fOSC = 350 kHz (typ.)
Figure 2 Switching Waveform of Inductance
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Maximum duty width for inductor on: 83.3% of fOSC Pulse output time width fOSC = 350 kHz
Pulse stop time width: 7.5 s (min)~15 s (max)
Repetition of waveforms at left
Pin A voltage
Pin A current (external inductance current)
I A (peak) = 240 mA (typ.)
Pin K voltage (current charged on capacitor)
Figure 3 Burst Control Waveforms
Burst Control
Burst control is control of the number of current pulses, shown in the graph on the previous page. Control is repeated in desired cycles. The current pulse in the graph is the charged current on capacitor 2 (C2) for output. The current pulse is supplied to the LED as current discharged from the output-side capacitor. The current pulse flows to GND via R_sens. The waveform of the voltage charged on the output-side capacitor is fed back to the IC from pin K via C2. The internal circuit which uses pin K for input controls the number of current pulses so that the mean voltage value of the obtained voltage waveform is 36 mV. As a result, the output current is controlled as the constant current (= mean current). Connecting R_sens = 1.8 obtains the mean current (36 mV / 1.8 = 20 mA). Current is controlled by PFM (pulse frequency modulation) because the time when the output pulse is generated varies (increases/decreases). A prerequisite is that the input power from VIN is larger than the output power to the LED load. The constant current is maintained by fixing a pulse stop time of 7.5~15 s and increasing/decreasing the number of current pulses. The number of current pulses is fewer when the input power exceeds the output power, larger when the input power is less than the output power. The burst frequency (pulse generation frequency) at controlled constant current is calculated as follows: fburst [Hz] = (number of current pulses x (1/275~1/350 kHz) + pulse stop time (7.5~15 s) . . . formula 1 The IC is designed to supply a load power of 320 mW (min). Generally, a step-up inductance of 47 H is used for optimum design for the load power of 320 mW. When the load power is small, the inductance must be small. Make sure the following condition for LED load between pins A and K is satisfied: VIN (VCC) < LED Vf total Note that, regardless of control by the IC, LEDs are always on.
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TB62731FUG
Standby Operation
The SHDN pin is used to set normal or standby operation. When SHDN is set to Low, the operation is standby; when the pin is High, the LED is turned on. Current consumption in Standby Mode is 1 A (max).
Output-side capacitor setting
When the output-side capacitor (C2) = 0.1 F, the peak current to be supplied to LEDs is expected to be the set current +5~+8 mA. When C2 = 0.01 F, the peak current is expected to be the set current +20~30 mA; when C2 = 1 F, it is the set current +2~3 mA. Toshiba recommend C2 = 1 F or more considering the LED max If. The IC is used only for lighting LEDs. The IC does not finely control output current ripples. This is because eliminating ripples is considered unnecessary as the LED emittance is recognized as the integral amount.
External inductance setting
The minimum external inductance is calculated as follows: L (H) = ((K x Po) - VIN min x Io) x (1/fOSC min) x 2 x (1/Ip min x Ip min) . . . formula 2 The above parameters are described below: Po: output power (power required by LED load) Po (W) = Vf LED x If LED + Vf schottky x If LED + R_sens x If LED x If LED LED forward current: If LED (mA) = Set current: Io (mA), LED forward voltage: Vf LED (V), schottky diode forward voltage: Vf schottky (V), Setting resistance: R_sens () VIN min (V): minimum input voltage (battery voltage) If the input voltage includes a resistance component, take the voltage drop into consideration for the minimum input voltage. The input current IIN is roughly estimated as follows: IIN (mA) = VfLED x Io x (1/) x (1/VIN) . . . formula 3 When min VIN = 3.2 (V), VfLED = 16 (V), Io = 18 (mA), and > 75 (%), then IIN = 0.12 (mA). As a result, = the voltage drops by 1.2 V due to the 1- DC resistance component. Because the IC's minimum VCC = 3.0 V, the minimum VIN is 3.12 V (VIN > 3.12 V). = Io (A): Mean current value set according to resistance R_sens () fOSC (Hz): Switching frequency of internal MOS transistor Specified values for fOSC (kHz): 275 min, 350 typ., 475 max Ip (A): Peak current value supplied to external inductor Specified values for Ip (A): 230 min, 240 typ., 270 max K: Margin of output power K = 1.1~1.3 The ideal condition is to give 1.05 to 1.3 times the output power Po as the input power. The loss of the IC is assumed to be included in the margin. If K is too large, it may not be possible for the current characteristic to be the specified value. Note that K > 1.
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TB62731FUG
Substitute the following conditions in formula 2. Supply voltage VIN = 3.0~4.3 (V) Output-side capacitor C2 = 1 (F) . . . C2 is ignored in the calculation. Where it is assumed that, VfLED = 16 (V), Vf schottky = 0.3 (V), R_sens = 1.8 (), Io = 20 (mA), K = 1.1 VfLED: LED Vf Vf schottky: schottky diode Vf R_sens: setting resistance Io: set current K: margin L (H) = ((1.1 x 16 x 0.02) - 3 x 0.02) x (1/275e3) x 2 x (1/(0.21 x 0.21)) = 48.1 (H, VIN = 3.0 V) 43.8 (H, VIN = 4.3 V) Thus, 48.1 (H) is selected when the input voltage is low, 3.0 V. Note that the calculation does not consider fluctuations in inductance. Toshiba recommend selection of an inductance of 1.2 times the calculated value. The recommended inductance under the above conditions is L (H) = 48.1 (H) x 1.2 > 57.7 (H). =
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TB62731FUG
Selection of R_sens
Resistance between pin K and GND R_sens () is used for setting output current Io. The mean output current Io can be set according to the resistance. The mean current Io (mA) to be set is roughly calculated as follows: Io (mA) = 36 (mV) / R_sens () For example, when R_sens = 1.8 (), Io = 20 (mA). Take a current error of 10% (not including R_sens error) into consideration. The IC has a minimum output Po = 320 (mA, choke coil = 47 H). At that time, if the product of mean current Io and output voltage Vo exceeds Po = 320 (mW), mean current Io may become less than the desired value. If the IC is not connected to the output-side capacitor (for smoothing), the set current Io can be obtained. At that time, because the current flowing to the LED is a pulse current with a maximum peak value of 270 mA, make sure that surge current IFP (mA) does not flow to the LED. Toshiba recommend use of components with low reactance (parasitic inductance) and minimized PCB wiring. Toshiba also recommend allocating components in the application circuit diagram as near each other as possible.
Relation between set current IO and setting resistance R_sens (typical value: VCC = 3.6 V, Ta = 25C)
40 : Io (mA)
30
Set current IO (mA)
20
10
0 10 9.1 8.2 6.8 5.6 4.7
3.3 2.7 2.2 2 1.8 1.5
1.2
1
Resistance for setting current R_sens ()
Figure 4
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TB62731FUG
Output Derating Function
Toshiba recommend derating the LED current depending on the increase in ambient temperature. The TB62731FUG is designed to ensure safe and efficient driving of white LEDs used as backlight sources for color LCDs. The IC incorporates a function that derates current according to the set temperature (the ambient temperature when the IC is mounted), Ta. The IC features an output current that varies according to the internally-detected temperature Tjs as follows: when Tjs = 45 (C), output current is 100%; when Tjs = 100 (C), output current is 0%. The derating start temperature Ts (C) is determined based on Ta (Ta = Ts when the IC is not operating) by subtracting the self-generated temperature Tup (C) from Tjs = 45 (C). Ts (C) = 45 (C) - Tup (C) . . . formula 4 The derating characteristic is as shown in the graph below, Figure 5, which shows the relation between output current change ratio and internally-detected temperature (IC temperature) Tjs. The self-generated temperature Tup (C) is calculated as follows: Tup (C) = (P loss (W) - P parts (W)) x ja (C/W) ) . . . formula 5 P loss: power loss P parts: power loss of parts ja: package saturation thermal resistance () The parameters are described below: DC resistance of inductor: RDC () LED forward current: If LED (A) LED forward voltage: Vf LED (V) Schottky diode forward voltage: Vf schottky (V) Setting resistance: R_sens P loss (W) Po (W) / (%) - Po (W) - Po: output power : power efficiency P parts (W) RDC x IIN + Vf schottky x If LED + R_sens x If LED x If LED -
ja (C/W) 260 (C/W) max when IC mounted on PCB
Po (W) = Vo (V) x Io (A) Vo: Vf LED output voltage Io: mean output current = set current Pi (W) = VIN (V) x IIN (A) Pi: input power VIN: input voltage IIN: mean input current
(%) = 100 x Po (W) / Pi (W)
Example of calculation: Where the measurement result for any lighting circuit shows the following values: RDC = 0.5 (), Po = 320 (mW), IIN = 0.1 (mA), Io = 20 (mA), R_sens = 1.8 (), Vf schottky = 0.3 (V), and = 70 (%)
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TB62731FUG
The self-generated temperature Tup (C) is calculated as follows: Tup (C) = ((0.32 - (0.32 x 0.7)) - (0.5 x 0.1 + 0.3 x 0.02 + 1.8 x 0.02 x 0.02)) x 260 = 10.2 (C) Thus, the derating start temperature Ts (C) is calculated as follows: Ts (C) = 45 (C) - 10.4 (C) = 34.8 (C) As a result, Io is controlled in the recommended current range as shown in Figure 5. Since saturation thermal resistance ja = 260 (C/W) is the maximum value, ja = 210~260 (C/W) is used as a mounting condition. Depending on the IC characteristics, peripherals, and use environment, the derating start temperature fluctuates among ICs.
Output current change ratio (%) [%]
120 100 80 60 40 20 0 0
Change from Ts = 34.8C (20 mA = 100%) Change according to Tjs Recommended LED current range (converted by 25 mA)
25 50 75 100
Temperatures Ts (C) and Tjs (C)
Figure 5 Derating Function of Set Current
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TB62731FUG
Current consumption at normal operation ICC (ON)
900 800
(A)
700 600
VCC 4 3
Current consumption
500 400 300 200 100 0 3
1 TB62731FUG 6 2 5
3.5
4
4.5
5
5.5
VCC (V)
Current consumption at shutdown
0.5
ICC (SHDN)
(A)
0.4
Current consumption at shutdown
VCC 4 3
0.3
1 TB62731FUG 6
0.2
2
5
0.1
0 3
3.5
4
4.5
5
5.5
VCC (V)
Output switching frequency
400
(kHz)
380
VCC 4 3 fOSC
Output switching frequency
360
1 TB62731FUG 6
340
2
5
320
300 3
3.5
4
4.5
5
5.5
VCC (V)
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TB62731FUG
Application Circuit Example 1 (characteristic using recommended coil as reference)
Though it is necessary to consider the DC resistance of L1, an inductance of 33 to 47 (typ.) to 68 H is suitable for turning on four LEDs.
L1 47 H S-Di
Input voltage - power efficiency/mean current
100 25
VIN 3.2 V~4.2 V
90
(%)
ON C1 10 F OFF
SHDN K GND
Power efficiency
70
GND
R_sens 1.8 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8
60
15
50 IF 40 3.2 3.4 3.6 3.8 4 10 4.2
Input voltage VIN
(V)
VIN 3.2 V~4.2 V
L1 47 H
S-Di
Input voltage - power efficiency/mean current
100 25
90
(%)
ON C1 10 F OFF
SHDN K GND
Power efficiency
70
GND
R_ sens 1.8 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8
60
15
50 IF 40 3.2 3.4 3.6 3.8 4 10 4.2
Input voltage VIN
(V)
VIN 3.2 V~4.2 V
L1 47 H
S-Di
Input voltage - power efficiency/mean current
100 25
90
(%)
ON C1 10 F OFF
SHDN K GND
Power efficiency
70
GND
R_ sens 1.8 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8
60
15
50 IF 40 3.2 3.4 3.6 3.8 4 10 4.2
Input voltage VIN
(V)
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Mean current
IF 20 mA
80
20
IF
(mA)
VCC
A
C2 1 F
Mean current
IF 20 mA
80
20
IF
(mA)
VCC
A
C2 1 F
Mean current
IF 20 mA
80
20
IF
(mA)
VCC
A
C2 1 F
TB62731FUG
Application Circuit Example 2
(characteristic using flat coil for handy terminal as reference)
Flat coils suitable for handy terminals have a large DC resistance; thus, the power efficiency drops slightly, to about 70%.
L1 44 H
Input voltage - power efficiency/mean current
100 25
VIN 3.2 V~4.2 V
S-Di
90
Power efficiency
GND
R_sens 1.8 L1: TDK LDR344812T-440 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8
60
15
50 IF 40 3.2 3.4 3.6 3.8 4 10 4.2
Input voltage VIN
(V)
VIN 3.2 V~4.2 V
L1 39 H
S-Di
Input voltage - power efficiency/mean current
100 25
90
Power efficiency
GND
R_sens 1.8 L1: TDK LDR344812T-390 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Susumu RL0510S-1R8
60
15
50 IF 40 3.2 3.4 3.6 3.8 4 10 4.2
Input voltage VIN
(V)
VIN 3.2 V~4.2 V
L1 27 H
S-Di
Input voltage - power efficiency/mean current
100 25
90
Power efficiency
GND
R_sens 1.8 L1: Toko A914BYW-270M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Susumu RL0510S-1R8
60
15
50 IF 40 3.2 3.4 3.6 3.8 4 10 4.2
Input voltage VIN
(V)
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Average
K GND
70
IF
C1 10 F
SHDN OFF
IF 20 mA
80
20
(mA)
ON
(%)
VCC
A
C2 1 F
Average
K GND
70
IF
C1 10 F
SHDN OFF
IF 20 mA
80
20
(mA)
ON
(%)
VCC
A
C2 1 F
Average
K GND
70
IF
C1 10 F
SHDN OFF
80
20
(mA)
ON
IF 20 mA or 16 mA
(%)
VCC
A
C2 1 F
TB62731FUG
VIN 3.2 V~4.2 V
L1 4.7 H
S-Di
Input voltage - power efficiency/mean current
100 10
90
9
(%)
ON C1 4.7 F OFF
SHDN K GND
Power efficiency
70
7
GND
R_sens 5.1 L1: Toko A914BYW-4R7 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens:
60
6
50 IF 40 3.2 3.4 3.6 3.8 4
5
4 4.2
Input voltage VIN
(V)
VIN 3.2 V~4.2 V
L1 15 H
S-Di
Input voltage - power efficiency/mean current
100 20
90
(%)
ON C1 4.7 F OFF
15 80
SHDN K GND
Power efficiency
70
10
GND
R_sens 2.4 L1: Sumitomo Special Metals CXLD (CXAD) 120-150 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens:
60 5 50 IF 40 3.2 3.4 3.6 3.8 4 0 4.2
Input voltage VIN
(V)
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Mean current
IF 8.5 mA
IF
(mA)
VCC
A
C2 1 F
Mean current
IF 8.5 mA
80
8
IF
(mA)
VCC
A
C2 1 F
TB62731FUG
Package Dimensions
Weight: 0.016 g (typ.)
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TB62731FUG
About solderability, following conditions were confirmed
* Solderability
(1) Use of Sn-63Pb solder Bath * solder bath temperature = 230C * dipping time = 5 seconds * the number of times = once * use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath * solder bath temperature = 245C * dipping time = 5 seconds * the number of times = once * use of R-type flux
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EBA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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